张长鑫. 化学气相沉积钽的动力学[J]. 工程科学学报, 1983, 5(4): 106-111. DOI: 10.13374/j.issn1001-053x.1983.04.011
引用本文: 张长鑫. 化学气相沉积钽的动力学[J]. 工程科学学报, 1983, 5(4): 106-111. DOI: 10.13374/j.issn1001-053x.1983.04.011
Zhang Zhangxin. The Kinetics of Chemical Vapor Deposition of Tantalum[J]. Chinese Journal of Engineering, 1983, 5(4): 106-111. DOI: 10.13374/j.issn1001-053x.1983.04.011
Citation: Zhang Zhangxin. The Kinetics of Chemical Vapor Deposition of Tantalum[J]. Chinese Journal of Engineering, 1983, 5(4): 106-111. DOI: 10.13374/j.issn1001-053x.1983.04.011

化学气相沉积钽的动力学

The Kinetics of Chemical Vapor Deposition of Tantalum

  • 摘要: 应用绝对反应速度理论和统计力学到化学气相沉积(CVD)钽上,建立了反应速度模型。实验表明,测定值与计算值间吻合较好。证实了用绝对反应速度理论建立的速度模型的正确性,而且证实了化学气相沉积钽的速度控制环节为表面化学反应。

     

    Abstract: Using the theory of absolute reacte rate and statistation mechanics for Chemical vapor deposition (CVD) of tantalum has been Constructed model of Chemical reaction.Experement presented, the agreement between measured and Calculabd data is good The fact seems to prove, rate model which using the absolute reacte rate obtained is correct and the rate-limiting step is the surfacl chemical reaction for Chemical Vapor deposition

     

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