张维平, 胡汉起. SiCp/ZA22复合材料的界面[J]. 工程科学学报, 1996, 18(4): 316-319. DOI: 10.13374/j.issn1001-053x.1996.04.004
引用本文: 张维平, 胡汉起. SiCp/ZA22复合材料的界面[J]. 工程科学学报, 1996, 18(4): 316-319. DOI: 10.13374/j.issn1001-053x.1996.04.004
Zhang Weiping, Hu Hanqi. Interface in SiCp/ZA22 Composite[J]. Chinese Journal of Engineering, 1996, 18(4): 316-319. DOI: 10.13374/j.issn1001-053x.1996.04.004
Citation: Zhang Weiping, Hu Hanqi. Interface in SiCp/ZA22 Composite[J]. Chinese Journal of Engineering, 1996, 18(4): 316-319. DOI: 10.13374/j.issn1001-053x.1996.04.004

SiCp/ZA22复合材料的界面

Interface in SiCp/ZA22 Composite

  • 摘要: 研究了SiCp/ZA22复合材料的界面,根据界面反应的热力学、能谱分析及高分辨透射电镜的研究结果,发现SiC/α-Al界面上形成了少量Al2MgO4过渡层,而SiC/η-Zn间无任何反应发生。

     

    Abstract: The interface between the aluminum(or zinc) matrix and SiC was characterized by interface reaction thermodynamics,EDAX and HREM.A transition layer of Al2MgO4 was observed at the interface between the partly a phase and SiC,and no reaction was found at η-Zn/SiC interface.

     

/

返回文章
返回