杨苏冰, 杨占兵, 王会. 脉冲激光亦或电子束辐照对SUS316L奥氏体不锈钢中空位扩散的影响[J]. 工程科学学报, 2017, 39(6): 903-908. DOI: 10.13374/j.issn2095-9389.2017.06.013
引用本文: 杨苏冰, 杨占兵, 王会. 脉冲激光亦或电子束辐照对SUS316L奥氏体不锈钢中空位扩散的影响[J]. 工程科学学报, 2017, 39(6): 903-908. DOI: 10.13374/j.issn2095-9389.2017.06.013
YANG Su-bing, YANG Zhan-bing, WANG Hui. Effect of pulsed-laser and/or electron irradiation on vacancy diffusion in SUS316L austenitic stainless steel[J]. Chinese Journal of Engineering, 2017, 39(6): 903-908. DOI: 10.13374/j.issn2095-9389.2017.06.013
Citation: YANG Su-bing, YANG Zhan-bing, WANG Hui. Effect of pulsed-laser and/or electron irradiation on vacancy diffusion in SUS316L austenitic stainless steel[J]. Chinese Journal of Engineering, 2017, 39(6): 903-908. DOI: 10.13374/j.issn2095-9389.2017.06.013

脉冲激光亦或电子束辐照对SUS316L奥氏体不锈钢中空位扩散的影响

Effect of pulsed-laser and/or electron irradiation on vacancy diffusion in SUS316L austenitic stainless steel

  • 摘要: 利用激光-超高压电子显微镜系统在500℃对SUS316L奥氏体不锈钢进行了电子束辐照和脉冲激光-电子束双束同时辐照(以下简称:同时辐照),通过观察和分析辐照后自由晶界处无空洞区域以及元素偏析,以电子束辐照结果为标准,对比研究了同时辐照对空位扩散的影响.结果表明:同时辐照后的无空洞区域宽度为48 ±16 nm,小于电子辐照的71 ±27 nm;不论在偏析程度还是偏析宽度上,同时辐照条件下Cr和Ni的偏析都小于对应的电子束辐照;同时辐照下空位的扩散通量仅为电子束辐照的45.7%.通过分析得出,和电子辐照相比,同时辐照促进了空位与间隙原子的再结合,限制空位向尾闾扩散,进而造成流入尾闾的空位数量减少,极大地抑制了辐照偏析与肿胀.脉冲激光-电子束双束同时辐照可以为探索抑制肿胀方法提供新的思路.

     

    Abstract: Electron irradiation and simultaneous pulsed-laser and electron dual-beam irradiation were performed using laser high voltage electronic microscopy (HVEM) at 500℃, and the void-denuded zone (VDZ) and radiation-induced segregation (RIS) near the random grain boundary were observed and analyzed after irradiation. Compared to electron irradiation, the effect of simultaneous pulsed-laser and electron dual-beam irradiation on vacancy diffusion was investigated. The results show that the width of VDZ after simultaneous pulsed-laser and electron dual-beam irradiation is 48 ±16 nm which is smaller than the VDZ width of 71 ±27 nm after electron irradiation. Both the magnitude and width of Cr and Ni segregation under simultaneous pulsed-laser and electron dual-beam irradiation are lower than those under electron irradiation. The ratio of vacancy flux of simultaneous pulsed-laser and electron dual-beam irradiation to that of electron irradiation is 45.7%. Compared to electron irradiation, the vacancy flux flowing into point defect sinks is lower owing to enhanced recombination between vacancies and interstitial spaces under simultaneous pulsed-laser and electron dualbeam irradiation. This has the effect of suppressing RIS and void swelling. Therefore, simultaneous pulsed-laser and electron dualbeam irradiation is expected to provide new insights into the suppression of void swelling.

     

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