李茹茹, 王凯怡, 密士安, 刘雅萍, 陈泽, 殷锡涛, 马晓光. 金属氧化物半导体一维材料H2S传感器研究进展[J]. 工程科学学报, 2023, 45(12): 2015-2025. DOI: 10.13374/j.issn2095-9389.2022.10.11.001
引用本文: 李茹茹, 王凯怡, 密士安, 刘雅萍, 陈泽, 殷锡涛, 马晓光. 金属氧化物半导体一维材料H2S传感器研究进展[J]. 工程科学学报, 2023, 45(12): 2015-2025. DOI: 10.13374/j.issn2095-9389.2022.10.11.001
LI Ruru, WANG Kaiyi, MI Shian, LIU Yaping, CHEN Ze, YIN Xitao, MA Xiaoguang. Research progress of H2S sensors based on metal oxide semiconductor nanomaterials with one-dimensional structures[J]. Chinese Journal of Engineering, 2023, 45(12): 2015-2025. DOI: 10.13374/j.issn2095-9389.2022.10.11.001
Citation: LI Ruru, WANG Kaiyi, MI Shian, LIU Yaping, CHEN Ze, YIN Xitao, MA Xiaoguang. Research progress of H2S sensors based on metal oxide semiconductor nanomaterials with one-dimensional structures[J]. Chinese Journal of Engineering, 2023, 45(12): 2015-2025. DOI: 10.13374/j.issn2095-9389.2022.10.11.001

金属氧化物半导体一维材料H2S传感器研究进展

Research progress of H2S sensors based on metal oxide semiconductor nanomaterials with one-dimensional structures

  • 摘要: 金属氧化物半导体具有较好的气敏性,基于金属氧化物半导体H2S气体传感特性得到了广泛研究. 然而,随着气体检测精细程度的增加,需要设计具有更优性能的纳米材料,来实现气体传感器检测下限和灵敏度的提高. 同其他维度纳米材料相比,一维结构纳米材料由于具有良好的结晶度、较大的比表面积和独特的电子输运特性,在H2S气敏性能提升上有明显优势. 因此,本文主要以H2S气体为主体,综述了基于金属氧化物半导体不同一维结构纳米材料的特点和一维结构纳米材料H2S气体传感器的研究进展. 讨论了金属氧化物半导体基一维结构纳米材料对H2S气体传感的影响和气敏机理. 最后,对金属氧化物半导体基一维结构纳米材料H2S气体传感器的性能改进和未来应用前景进行了展望.

     

    Abstract: The phenomenon that CuO resistors encounter gas changes opens the prelude to metal oxide semiconductors (MOSs) as gas sensing. From 1953 to 1968, the research and production of MOS gas sensors were unified, but the gas-sensitive materials used at that time were mostly bulk. Owing to the continuous exploration of material science and technology, nanomaterials began to flourish at the end of the 20th century. The emergence of nanomaterials promoted the development of gas sensors to a certain extent because the properties of MOSs are material dependent. Over the past few decades, nanomaterial applications in the field of gas sensing have led to the preparation of MOS-based gas sensors that can identify harmful gases in different environments with excellent characteristics, such as high sensitivity, selectivity, and stability, along with fast response/recovery. However, with the improving precision of gas detection, single-metal MOS materials have faced difficulty in meeting gas-sensing requirements. Therefore, preparing MOS materials into various nanostructures is desirable to improve the detection limit and sensitivity of gas sensors. When compared to nanomaterials with multiple-dimensional structures, one-dimensional counterparts exhibit improved gas-sensitive performance for H2S due to their larger specific surface area, good crystallinity, unique electron transport characteristics, and controllable grain size. Therefore, in this study, H2S gas is mainly focused, and the characteristics of nanomaterials with different one-dimensional structures based on MOSs are reviewed along with the research progress of H2S gas sensors based on nanomaterials with one-dimensional structures. Herein, regarding gas sensing, various properties of common one-dimensional nanostructures, such as nanowires, nanorods, nanofibers, and nanotubes, are thoroughly analyzed and summarized. The importance of H2S gas detection in military, medical, industrial, and everyday applications is briefly discussed, along with the common preparation methods for nanomaterials with one-dimensional structures. In addition, the working mechanism of p-type and n-type MOS as gas sensors is discussed. Furthermore, the influence of MOS-based nanomaterials with one-dimensional structures on H2S gas–sensitivity properties and mechanisms was investigated. Simultaneously, based on the gas-sensitive properties of nanomaterials with one-dimensional structures, the practical application characteristics of various nanomaterials with one-dimensional structures are highlighted. Finally, the performance improvement and future application prospects of MOS-based nanomaterials with one-dimensional structures for H2S gas sensors are discussed.

     

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