Zhang Zhangxin. The Kinetics of Chemical Vapor Deposition of Tantalum[J]. Chinese Journal of Engineering, 1983, 5(4): 106-111. DOI: 10.13374/j.issn1001-053x.1983.04.011
Citation: Zhang Zhangxin. The Kinetics of Chemical Vapor Deposition of Tantalum[J]. Chinese Journal of Engineering, 1983, 5(4): 106-111. DOI: 10.13374/j.issn1001-053x.1983.04.011

The Kinetics of Chemical Vapor Deposition of Tantalum

  • Using the theory of absolute reacte rate and statistation mechanics for Chemical vapor deposition (CVD) of tantalum has been Constructed model of Chemical reaction.Experement presented, the agreement between measured and Calculabd data is good The fact seems to prove, rate model which using the absolute reacte rate obtained is correct and the rate-limiting step is the surfacl chemical reaction for Chemical Vapor deposition
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