Influence of Loading Rate on Dislocation Emission, Width of StackingFault and Dislocation Velocity

Cu and Al single crystals with molecular dynamics simulation method was studied.Under mode Ⅱ loading, the influence of loading rate on dislocation emission, width of stacking fault and dislocation velocity was analyzed. The simulated results show that width of stacking fault decreases as loading rate increases, while dislocation velocity increase dramatically.If loading rate is very high, system energy will be released by dislocation emission, the twinning is formed as well.