吴平. 氢化非晶态硅薄膜的渗氢内耗实验研究[J]. 工程科学学报, 1997, 19(5): 505-509. DOI: 10.13374/j.issn1001-053x.1997.05.019
引用本文: 吴平. 氢化非晶态硅薄膜的渗氢内耗实验研究[J]. 工程科学学报, 1997, 19(5): 505-509. DOI: 10.13374/j.issn1001-053x.1997.05.019
shu
Wu Ping. Experimental Study of Internal Friction of a-Si:H Films Charged with Hydrogen[J]. Chinese Journal of Engineering, 1997, 19(5): 505-509. DOI: 10.13374/j.issn1001-053x.1997.05.019
Citation: Wu Ping. Experimental Study of Internal Friction of a-Si:H Films Charged with Hydrogen[J]. Chinese Journal of Engineering, 1997, 19(5): 505-509. DOI: 10.13374/j.issn1001-053x.1997.05.019
shu

氢化非晶态硅薄膜的渗氢内耗实验研究

Experimental Study of Internal Friction of a-Si:H Films Charged with Hydrogen

    摘要
  • 摘要: 用簧片振动法研究了GDa－Si：H薄膜气氛渗氢后的内耗.当测量频率为47.5Hz时，在－46℃处观察到氢致内耗峰，其激活能为0.30±0.05eV，弛豫时间因子为3.52×10-9 s.

     

    Abstract: The internal friction of GD a-Si:H films charged with hydrogen in hydrogen atmosphere were measured by reed vibrating method. As a result, hydrogen related peak appears at 47.5Hz and -46℃ with activation energy (0.30 ±0.05)eV and relaxation time 3.52×10-9 s. Further research is needed to make the nature clear.

     

    • HTML全文
    • 参考文献(0)
    • 相关文章
    • 施引文献
  • 资源附件(0)

/

返回文章
返回