李华瑞, 董克柱, 陈立虹, 尹秀兰, 阎连洞, 林宏平. 非晶合金薄膜(Fe0.4Ni0.2Cr0.4)72Si28的电阻特性与温度及非晶度的关系[J]. 工程科学学报, 1984, 6(3): 77-83. DOI: 10.13374/j.issn1001-053x.1984.03.008
引用本文: 李华瑞, 董克柱, 陈立虹, 尹秀兰, 阎连洞, 林宏平. 非晶合金薄膜(Fe0.4Ni0.2Cr0.4)72Si28的电阻特性与温度及非晶度的关系[J]. 工程科学学报, 1984, 6(3): 77-83. DOI: 10.13374/j.issn1001-053x.1984.03.008
Li Huarui, Dong Kezhu, Chen Lihong, Yin Xiulan, Yan Liandong, Lin Hongping. The Relationship of Resistance Properties Amorphous Alloy Film (Fe0.4Ni0.2Cr0.4)72Si28 with Temperature and Non-Crystallinity[J]. Chinese Journal of Engineering, 1984, 6(3): 77-83. DOI: 10.13374/j.issn1001-053x.1984.03.008
Citation: Li Huarui, Dong Kezhu, Chen Lihong, Yin Xiulan, Yan Liandong, Lin Hongping. The Relationship of Resistance Properties Amorphous Alloy Film (Fe0.4Ni0.2Cr0.4)72Si28 with Temperature and Non-Crystallinity[J]. Chinese Journal of Engineering, 1984, 6(3): 77-83. DOI: 10.13374/j.issn1001-053x.1984.03.008

非晶合金薄膜(Fe0.4Ni0.2Cr0.4)72Si28的电阻特性与温度及非晶度的关系

The Relationship of Resistance Properties Amorphous Alloy Film (Fe0.4Ni0.2Cr0.4)72Si28 with Temperature and Non-Crystallinity

  • 摘要: 测定了非晶合金薄膜(Fe0.4Ni0.2Cr0.4)72Si28在20-620℃范围内电阻随温度变化的曲线,以及这一变化与薄膜的物相构成及非晶度的关系。研究了这一合金薄膜电阻温度系数TCR随热处理温度的变化以及它与非晶度的关系。探讨了合金薄膜中Si的含量对TCR数值的影响及作用机理。指出了获得合金薄膜最佳电阻温度系数的一些可能的途径。

     

    Abstract: The change of resistance of amorphous alloy film(Fe0.4Ni0.2Cr0.4)72Si28 with temperature ranging from 20 to 620℃ and the relationship of this change with phase composition and non-crystallinity of this film were determined. The temperature coefficient of resistance with tempering temperature and its relationship with non-crystallinity was studied. The influence and principles of Si content in this film to TCR value was disscused. The change of resistance of amorphous alloy film(Fe0.4Ni0.2Cr0.4)72Si28 with temperature ranging from 20 to 620℃ and the relationship of this change with phase composition and non-crystallinity of this film were determined. The temperature coefficient of resistance with tempering temperature and its relationship with non-crystallinity was studied. The influence and principles of Si content in this film to TCR value was disscused.

     

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