TiCl4-NH3-H2体系低温化学气相沉积TiN的机理和条件
Low Temperature Chemical Vapour Deposition of TiN in TiCl4-NH3-H3 System
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摘要: 在TiCl4-NH3-H2体系中,TiN的沉积温度通常在650-950℃,本研究采用TiCl4+H2与NH3+H2两种混和气体,可使TiN的沉积温度降低到500℃。所得TiN的硬度HV0.1=17.67kN·m m-2、a=0.4234nm,550℃时硬度HV0.1=18.91kN·mm-2,580℃ HV0.1=20.36kN·mm-2,而其颜色则依次由紫黄变为黄色。350℃部生成TiNCl。TiNCl在402℃开始分解,到800℃分解完毕,其分解反应的表观活化能为131kJ/mol。TiN生成反应表现活比能为67.3kJ/mol。Abstract: This papar presented a study of low temperature chemical vapour deposition of TiN in TiCl4-NH3-H2 system. TiN was obtained at the temperature of 500℃. Its hardness HV0.1 = 17.67kN/mm2, and lattice constant a=0.4234nm.The Surface reaction activation energy of TiN was 67.3kJ /mol. Decomposition of TiNCl, from which TiN was produced, was also studied. The activation energy of this reaction was 131kJ/mol.
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