柴春林, 滕蛟, 于广华, 姜文博, 朱逢吾, 赖武彦. NiO钉扎的自旋阀的结构和磁性[J]. 工程科学学报, 2000, 22(1): 49-51. DOI: 10.13374/j.issn1001-053x.2000.01.038
引用本文: 柴春林, 滕蛟, 于广华, 姜文博, 朱逢吾, 赖武彦. NiO钉扎的自旋阀的结构和磁性[J]. 工程科学学报, 2000, 22(1): 49-51. DOI: 10.13374/j.issn1001-053x.2000.01.038
CHAI Chunlin, TENG Jiao, YU Guanghua, JIANG Wenbo, ZHU Fengwu, LAI Wuyan. Structure and Magnetism in NiO Spin-valve[J]. Chinese Journal of Engineering, 2000, 22(1): 49-51. DOI: 10.13374/j.issn1001-053x.2000.01.038
Citation: CHAI Chunlin, TENG Jiao, YU Guanghua, JIANG Wenbo, ZHU Fengwu, LAI Wuyan. Structure and Magnetism in NiO Spin-valve[J]. Chinese Journal of Engineering, 2000, 22(1): 49-51. DOI: 10.13374/j.issn1001-053x.2000.01.038

NiO钉扎的自旋阀的结构和磁性

Structure and Magnetism in NiO Spin-valve

  • 摘要: 利用反应溅射的方法制备了NiO薄膜,并研究了NiO对NiFe薄膜的钉扎作用,结果表明钉扎场与反应溅射时的Ar/O2比例、总的溅射气压、基底的粗糙度等有很大关系.利用光电子能谱(XP)分析了NiOx中的Ni,O离子的价态.并制备了NiO钉扎的自旋阀Ta/NiO/NiFe/Cu/NiFe/Ta,其磁电阻(MR)可达到2.2%,钉扎场为10.48kA/m.

     

    Abstract: The exchange fields of NiO/NiFe bilayer have been investigated, and the NiO film is deposited by dc magnetron reactive sputtering.It has been shown that exchange field is relation to the ratio of Ar/O2 (Volume ration), total sputtering pressure and the roughness of substrate.The Ni and O ion in NiOx is analyzed by means of XPS.The spin-vavie Ta/NiO/NiFe/Cu/NiFe/Ta pinned by NiO is deposited, and its magne-toresistance reaches 2.2% and pinning field is 10.48 KA/m.

     

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