龙世兵, 马纪东, 于广华, 赵洪辰, 朱逢吾, 张国海, 夏洋. SiO2/Ta界面反应及其对Cu扩散的影响[J]. 工程科学学报, 2003, 25(1): 33-35. DOI: 10.13374/j.issn1001-053x.2003.01.010
引用本文: 龙世兵, 马纪东, 于广华, 赵洪辰, 朱逢吾, 张国海, 夏洋. SiO2/Ta界面反应及其对Cu扩散的影响[J]. 工程科学学报, 2003, 25(1): 33-35. DOI: 10.13374/j.issn1001-053x.2003.01.010
shu
LONG Shibing, MA Jidong, YU Guanghua, ZHAO Hongchen, ZHU Fengwu, ZHANG Guohai, XIA Yang. Reaction of the SiO2/Ta Interface and its Influence on Cu Diffusion[J]. Chinese Journal of Engineering, 2003, 25(1): 33-35. DOI: 10.13374/j.issn1001-053x.2003.01.010
Citation: LONG Shibing, MA Jidong, YU Guanghua, ZHAO Hongchen, ZHU Fengwu, ZHANG Guohai, XIA Yang. Reaction of the SiO2/Ta Interface and its Influence on Cu Diffusion[J]. Chinese Journal of Engineering, 2003, 25(1): 33-35. DOI: 10.13374/j.issn1001-053x.2003.01.010
shu

SiO2/Ta界面反应及其对Cu扩散的影响

Reaction of the SiO2/Ta Interface and its Influence on Cu Diffusion

    摘要
  • 摘要: 利用磁控溅射方法在表面有SiO2层的Si基片上溅射Ta薄膜,采用X射线光电子能谱研究了SiO2/Ta界面以及Ta5Si3标准样品,并进行计算机谱图拟合分析.实验结果表明在制备态下在SiO2/Ta界面处有更稳定的化合物新相Ta5Si3和Ta2O5生成.在采用Ta作阻挡层的ULSI铜互连结构中这些反应产物可能有利于对Cu扩散的阻挡.

     

    Abstract: Ta films were deposited on Si substrates precoated with SiO2 by magnetron sputtering. The SiO2/Ta interface and the Ta5Si3 standard sample were investigated by X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results show that there is a thermodynamically favorable reaction at the SiO2/Ta interface. The more stable products Ta5Si3 and Ta2O5 may be beneficial to stop the diffusion of Cu into SiO2.

     

    • HTML全文
    • 参考文献(0)
    • 相关文章
    • 施引文献
  • 资源附件(0)

/

返回文章
返回