氮化烧成后硅在刚玉氮化硅材料中的赋存形态

Morphology of silicon in corundum silicon-nitride composites after nitridation

摘要: 研究了不同温度氮化烧成后,硅在刚玉氮化硅材料中的赋存形态.结果表明:1300℃氮化后,硅的外层包裹着絮状的0'-Sialon;1400℃时,硅颗粒破裂且内部有氮化硅生成; 1500℃时,已没有残留硅保留下来,硅氮化生成了0'-Sialon和氮化硅;1600℃时,硅氮化完全,其中的杂质相CaO,Fe₂O₃等富集在一起.

Abstract: The morphology of silicon was studied in corundum silicon-nitride composites after nitridation at different temperatures. The results showed that silicon was wrapped by flocculant O'-Sialon at 1300℃. Silicon grains were broken and silicon nitride formed inside the grains at 1400℃. All silicon was nitrided into O'-Sialon or silicon nitride without any silicon left at 1500℃. Impurities from silicon such as CaO, Fe₂O₃ were aggregated at 1600℃.