基质掺杂离子对（Y,Rn）2O2S∶Sm3+,Ti4+,Mg2+（Rn=La,Gd,Lu,Ga,Al）红色长余辉材料余辉性能的影响

基质掺杂离子对（Y,Rn）₂O₂S∶Sm³⁺,Ti⁴⁺,Mg²⁺（Rn=La,Gd,Lu,Ga,Al）红色长余辉材料余辉性能的影响

摘要: 采用高温固相法制备了基质掺杂的（Y，Rn）₂O₂S：Sm³⁺，Ti⁴⁺，Mg²⁺（Rn=La，Gd，Lu，Ga，Al）红色长余辉材料，主峰均为⁴G_5/2→6H_7/2跃迁的红橙色光发射，不受基质掺杂的影响．余辉性能测试表明掺杂离子半径对余辉性能具有重要的影响：单掺时，与Y³⁺半径相近并略小时样品的余辉时间有正增长；双离子共掺时均为小半径的掺杂对余辉性能有显著的提高，其中之一半径较大时即具有负效应．并对可能存在的机理进行了初步探讨．

Abstract: Host doped (Y,Rn)₂O₂S:Sm³⁺,Ti⁴⁺,Mg²⁺ (Rn=La, Gd, Lu, Ga, Al) red phosphors were prepared by solid state method. Their chief emission peaks are in the red-orange range coming from the energy transition of ⁴G_5/2→⁶H_7/2 and host-doping has little effluence on the emitting spectra. Afterglow results show that the semi diameter of doped ions has some effect on the longlasting property. When the doped ion is a little smaller than Y³⁺, the afterglow time will increase. When two ions are doped, two smaller ions doping will promote the long-lasting property; if one ion is larger than Y³⁺, it will shorten the long-lasting time. The presumable mechanism was also discussed.