声表面波器件金刚石薄膜基片的制备工艺

Technique of preparing diamond films on poly-substrate by DC-arc plasma jet CVD for surface acoustic wave devices

摘要: 为制备高质量的声表面波器件,探索金刚石薄膜的沉积工艺,采用直流电弧等离子体喷射化学气相沉积技术和特殊的复合衬底技术,在单晶硅衬底上制备了大面积、高质量的金刚石薄膜,成功解决了单晶硅衬底在沉积金刚石薄膜过程中产生的变形问题.研究了甲烷浓度和沉积温度对金刚石薄膜质量的影响,优化了沉积工艺.结果表明,甲烷气体体积分数为1.8%时,晶粒最为细小,同时金刚石薄膜的表面粗糙度最小,表面最为光滑.衬底温度为1000℃时生长的金刚石薄膜的晶粒尺寸较小.

Abstract: In order to synthesize high quality surface acoustic wave devices and explore the deposition process of diamond films, large-area high-quality diamond films were deposited on silicon substrate by DC-arc plasma jet CVD. Deformation of the silicon substrate which happened in the deposition process was eliminated by a special poly-substrate technique. The influences of the concentration of methane and the temperature of the substrate on the diamond films were studied, and the deposit process was optimized. The results showed that fine grain diamond films were gained when the volume fraction of methane was 1.8% and the temperature of the substrate was 1000℃. The roughness of the diamond films deposited under this condition is the lowest.