张毓隽, 童震松, 沈卓身. SPS方法制备铜/金刚石复合材料[J]. 工程科学学报, 2009, 31(8): 1019-1023. DOI: 10.13374/j.issn1001-053x.2009.08.010
引用本文: 张毓隽, 童震松, 沈卓身. SPS方法制备铜/金刚石复合材料[J]. 工程科学学报, 2009, 31(8): 1019-1023. DOI: 10.13374/j.issn1001-053x.2009.08.010
ZHANG Yu-juan, TONG Zhen-song, SHEN Zhuo-shen. Preparation of Cu/diamond composites by spark plasma sintering[J]. Chinese Journal of Engineering, 2009, 31(8): 1019-1023. DOI: 10.13374/j.issn1001-053x.2009.08.010
Citation: ZHANG Yu-juan, TONG Zhen-song, SHEN Zhuo-shen. Preparation of Cu/diamond composites by spark plasma sintering[J]. Chinese Journal of Engineering, 2009, 31(8): 1019-1023. DOI: 10.13374/j.issn1001-053x.2009.08.010

SPS方法制备铜/金刚石复合材料

Preparation of Cu/diamond composites by spark plasma sintering

  • 摘要: 采用放电等离子烧结(SPS)方法制备出高体积分数的铜/金刚石复合材料,并对复合材料的致密度、热导率和热膨胀系数等进行了研究.结果表明,采用该方法制备的铜/金刚石复合材料微观组织均匀,致密度分布为94%~99%,最高热导率为305W·(m·K)-1,热膨胀系数与常见电子半导体材料相匹配,能够满足电子封装材料的要求.

     

    Abstract: High volume fraction Cu/diamond composites were successfully prepared by spark plasma sintering (SPS). Their relative density, thermal conductivity and coefficient of thermal expansion (CTE) were investigated. It is found that the composites have a uniform microstructure, with the relative density from 94% to 99%, the highest thermal conductivity of 305 W· (m·K)-1, and the CTE matching with common electronic semiconductor materials. All these properties can meet the demands of electronic packaging materials.

     

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