陈康, 王力农, 李恩文, 宋斌, 方雅琪, 李小春, 陈天柱, 简思亮. 基于GaN材料的特高压输电线路的验电标识[J]. 工程科学学报, 2018, 40(9): 1115-1122. DOI: 10.13374/j.issn2095-9389.2018.09.013
引用本文: 陈康, 王力农, 李恩文, 宋斌, 方雅琪, 李小春, 陈天柱, 简思亮. 基于GaN材料的特高压输电线路的验电标识[J]. 工程科学学报, 2018, 40(9): 1115-1122. DOI: 10.13374/j.issn2095-9389.2018.09.013
CHEN Kang, WANG Li-nong, LI En-wen, SONG Bin, FANG Ya-qi, LI Xiao-chun, CHEN Tian-zhu, JIAN Si-liang. Electrical inspection mark of UHV transmission line based on GaN material[J]. Chinese Journal of Engineering, 2018, 40(9): 1115-1122. DOI: 10.13374/j.issn2095-9389.2018.09.013
Citation: CHEN Kang, WANG Li-nong, LI En-wen, SONG Bin, FANG Ya-qi, LI Xiao-chun, CHEN Tian-zhu, JIAN Si-liang. Electrical inspection mark of UHV transmission line based on GaN material[J]. Chinese Journal of Engineering, 2018, 40(9): 1115-1122. DOI: 10.13374/j.issn2095-9389.2018.09.013

基于GaN材料的特高压输电线路的验电标识

Electrical inspection mark of UHV transmission line based on GaN material

  • 摘要: 研制了一种无机材料构成的验电标识,放置在导线周围,通过电场驱动电子的运动,促进载流子复合,进而使材料发光,从而判断带电情况,其作为验电标识使用非常便捷.选取了氮化镓GaN材料进行研究,以GaN、InGaN等材料为基础,通过溶胶凝胶法、气相外延等方法制备接触层、基片层、材料层等结构,进而获得了验电标识,该验电标识的发光层是具有多量子肼结构的纳米棒阵列.然后对其进行了电学光学性能参数测试,获得了有关特性曲线,通过Ansoft-maxwell有限元软件进行仿真,分析材料在特高压输电线路周围的电场分布,通过试验分析验电标识发光所需求的电磁环境.最后模拟导线现场进行测试.研究表明,该低场致发光特性的验电标识具有发光功耗低,发光明显等优点,其处于所在区域的电场强度达到1.2×106V·m-1以上时,可激发发光,此时所注入电流约为1.1 mA.通过仿真和试验分析可知带电特高压输电线路周围的空间电场强度满足验电标识发光指示的要求,同时空间杂散电流和材料本身的电容效应提供注入电流.该验电标识通过材料本身发光特性来指示带电状态,安装在距离特高压导线轴线13 cm及以内的范围即可实现验电,通过封装具有较好的耐候性能,同时避免了复杂的电路装置验电存在易受电磁干扰,可靠性差等问题.

     

    Abstract: At present, the traditional insulated pole electroscope is used for electrical inspection in high-voltage transmission lines. However, when it is used in ultra-high voltage (UHV) transmission lines, the length of its insulated rod is large, and there are disadvantages such as large working intensity, inconvenience, and hazardous operation. In this study, an electroluminescent inorganic material was made to be used for inspection mark. The material was placed around the wire, so that it glowed during the electric fielddriven movement of electrons to promote carrier recombination, through which the charged situation could be determined. Therefore, the electrification of the line can be judged through the material luminescent properties, making it very convenient to be used for inspection mark. In this study, GaN materials were investigated. Based on the GaN, InGaN, and other materials, the contact layer, substrate layer, material layer and other structures were made by methods such as sol-gel method and gas phase epitaxy. Then the inspection mark was prepared. The light-emitting layer was a nanorod array with a multi-quantum hydrazine structure. The electrical and optical properties of the inspection mark were tested, and the relevant characteristic curve was obtained. Through a simulation of the Ansoft-maxwell finite element software, the electric field distribution of the inspection mark and surrounding transmission lines were analyzed. Through experiments, the electromagnetic environment needed for electroluminescence was tested in the high-voltage test hall of Wuhan University. Finally, the inspection mark was tested in a working environment simulated in the Feng-huang ultra-high voltage test site. The research shows that the low-field electroluminescent inspection mark has the advantages of low power consumption and obvious luminescence. When it is in an area where the electric field strength is above 1.2×106V·m-1, the light can be excited and the injected current is about 1.1 mA. Simulation and experimental analysis show that the electric field strength around the UHV transmission lines meets the requirements of the light-emitting indication of an electroscope. Meanwhile, the space stray current and capacitance effect of the material provide the injection current. The inspection mark indicates the charged state through the light-emitting properties. Its installation can be within a distance of 13 cm from the UHV conductor axis, and it has good weather resistance. Meanwhile, it avoids problems such as electromagnetic interference and poor reliability that occur in electroscope equipment with complex circuits.

     

/

返回文章
返回