Ma Zhaoceng, Zhang Rongming. Low Temperature Chemical Vapour Deposition of TiN in TiCl4-NH3-H3 System[J]. Chinese Journal of Engineering, 1992, 14(3): 378-382. DOI: 10.13374/j.issn1001-053x.1992.03.033
Citation: Ma Zhaoceng, Zhang Rongming. Low Temperature Chemical Vapour Deposition of TiN in TiCl4-NH3-H3 System[J]. Chinese Journal of Engineering, 1992, 14(3): 378-382. DOI: 10.13374/j.issn1001-053x.1992.03.033
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Low Temperature Chemical Vapour Deposition of TiN in TiCl4-NH3-H3 System

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  • This papar presented a study of low temperature chemical vapour deposition of TiN in TiCl4-NH3-H2 system. TiN was obtained at the temperature of 500℃. Its hardness HV0.1 = 17.67kN/mm2, and lattice constant a=0.4234nm.The Surface reaction activation energy of TiN was 67.3kJ /mol. Decomposition of TiNCl, from which TiN was produced, was also studied. The activation energy of this reaction was 131kJ/mol.
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