Thermal Stress Analysis of Large Area Diamond Films
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Abstract
Numerical model for large area diamond film deposition by DC Arc Plasma Jet CVD method is proposed. Chemical environment over the substrate surface during diamond growth were calculated, and was compared with experiment data from optical emission spectrum obtained at similar conditions. It was found that the CH radical may be main active precursor responsible for diamond growth. The overall uniform distribution of CH radical is important for large area deposition of diamond films.
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