LONG Shibing, MA Jidong, YU Guanghua, ZHAO Hongchen, ZHU Fengwu, ZHANG Guohai, XIA Yang. Reaction of the SiO2/Ta Interface and its Influence on Cu Diffusion[J]. Chinese Journal of Engineering, 2003, 25(1): 33-35. DOI: 10.13374/j.issn1001-053x.2003.01.010
Citation: LONG Shibing, MA Jidong, YU Guanghua, ZHAO Hongchen, ZHU Fengwu, ZHANG Guohai, XIA Yang. Reaction of the SiO2/Ta Interface and its Influence on Cu Diffusion[J]. Chinese Journal of Engineering, 2003, 25(1): 33-35. DOI: 10.13374/j.issn1001-053x.2003.01.010
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Reaction of the SiO2/Ta Interface and its Influence on Cu Diffusion

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  • Ta films were deposited on Si substrates precoated with SiO2 by magnetron sputtering. The SiO2/Ta interface and the Ta5Si3 standard sample were investigated by X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results show that there is a thermodynamically favorable reaction at the SiO2/Ta interface. The more stable products Ta5Si3 and Ta2O5 may be beneficial to stop the diffusion of Cu into SiO2.
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