Morphology of silicon in corundum silicon-nitride composites after nitridation
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Abstract
The morphology of silicon was studied in corundum silicon-nitride composites after nitridation at different temperatures. The results showed that silicon was wrapped by flocculant O'-Sialon at 1300℃. Silicon grains were broken and silicon nitride formed inside the grains at 1400℃. All silicon was nitrided into O'-Sialon or silicon nitride without any silicon left at 1500℃. Impurities from silicon such as CaO, Fe2O3 were aggregated at 1600℃.
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