Microstructure and properties of SiCp/Al electronic packaging materials fabricated by pseudo-semi-solid thixoforming
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Abstract
SiC particles reinforced Al matrix composites with three different SiC volume fractions of 40%, 56% and 63% for electronic packaging were prepared by pseudo-semi-solid thixoforming. The Al and SiC distribution and the fractographs of the SiCp/Al electronic packaging materials were examined by optical microscopy and scanning electron microscopy. The density, relative density, thermal conductivity (TC), coefficient of thermal expansion (CTE), compressive strength and bending strength of the SiCp/Al electronic packaging materials were tested. It is found that the SiCp/Al electronic packaging materials have controllable coefficients of thermal expansion and high relative density. The Al matrix is connected into a network, and SiC particles are uniformly distributed in the Al matrix. When the SiC volume fraction increases, the density and thermal conductivity at room temperature lightly increase, the coefficient of thermal expansion gradually decreases, and the compressive strength and bending strength increase. The main fracture mode of the SiC/Al electronic packaging materials is brittle fracture of SiC particles accompanied by ductile fracture of the Al matrix at the same time.
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